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DOWA

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LED
Communication
Sensor
Lighting iInfraredj
Display
GaAsŠî”Â
Laser grade
LED grade
Semi-insulating
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Substrate: c-plane sapphire
Crystal Structure of AlN Epitaxial Layer: wurtzite
Diameter: 50.8 mm } 0.25 mm (typical)
Thickness of Substrate: 430 ƒÊm } 25 ƒÊm (typical)
Thickness of AlN Epitaxial Layer: 1 ƒÊm } 0.3 ƒÊm (typical)
Surface : c-plane AlN, as grown
effective area < 40 mmƒ³ (typical)
no cracks by a visual inspection.
Backside : rough
FWHM of X-ray ƒÖ-scan rocking curve : < 150 arcsec for (0002) (typical)
Conductivity : insulating
Packing : packaged fluoroware container
and vacuum-packed.

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‚¨–â‚¢‡‚¹Fhemt@dowa.co.jp


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