DOWA Dowa Electronics Materials Co., Ltd.
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AlN Template

AlN Template

Substrate: c-plane sapphire
Crystal Structure of AlN Epitaxial Layer: wurtzite
Diameter: 50.8 mm ± 0.25 mm (typical)
Thickness of Substrate: 430 μm ± 25 μm (typical)
Thickness of AlN Epitaxial Layer: 1 μm ± 0.3 μm (typical)
Surface : c-plane AlN, as grown
effective area < 40 mmΦ (typical)
no cracks by a visual inspection.
Backside : rough
FWHM of X-ray ω-scan rocking curve : < 150 arcsec for (0002) (typical)
Conductivity : insulating
Packing : packaged fluoroware container
and vacuum-packed.

image

e-mail to: hemt@dowa.co.jp


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