DOWA Dowa Electronics Materials Co., Ltd.
DOWA

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Semi-insulating
AlN Template

AlN Template

Substrate: c-plane sapphire
Crystal Structure of AlN Epitaxial Layer: wurtzite
Diameter: 50.8 mm } 0.25 mm (typical)
Thickness of Substrate: 430 m } 25 m (typical)
Thickness of AlN Epitaxial Layer: 1 m } 0.3 m (typical)
Surface : c-plane AlN, as grown
effective area < 40 mm (typical)
no cracks by a visual inspection.
Backside : rough
FWHM of X-ray -scan rocking curve : < 150 arcsec for (0002) (typical)
Conductivity : insulating
Packing : packaged fluoroware container
and vacuum-packed.

image

e-mail to: hemt@dowa.co.jp


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